2007. 3. 6 1/2 semiconductor technical data smab34 schottky barrier type diode revision no : 6 switching type power supply applications. features low profile surface mount package. low power loss, high efficiency. for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. application switching power supply. dc/dc converter. home appliances, office equipment. telecommunication. maximum rating (ta=25 ) characteristic symbol rating unit maximum repetitive peak reverse voltage v rrm 40 v average output rectitifed current i o 3 a peak one cycle surge forward current (non-repetitive 60hz) i fsm 70 a junction temperature t j -40 125 storage temperature range t stg -40 125 sma dim millimeters a b c d e f g 4.5 0.2 2.6 0.2 1.5 0.2 5.0 0.3 1.2 0.3 2.0 0.2 0 ~ 0.15 h r 0.5 a b c h d e e 1 2 f g + _ + _ + _ + _ + _ + _ 1. anode 2. cathode electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit peak forward voltage v fm i fm =3.0a - - 0.52 v repetitive peak reverse current i rrm v rrm =rated - - 0.5 ma thermal resistance r th(j-1) junction to lead - - 23 /w r th(j-a) junction to ambient (on alumina substrate) - - 108 type name marking b 3 4 lot no.
2007. 3. 6 2/2 smab34 revision no : 6 i - v f f f forward voltage v (v) f forward current i (a) number of cycles at 60hz peak surge forward current i (a) 1 0 20 40 80 60 fsm 10 surge forward current (non - repetitive) 100 ta=25 c f=60hz p - i f(av) f(av) f(av) average forward current i (a) 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.6 1.4 f(av) average forward power dissipation p (w) 0.6 1.2 1.8 2.4 3.0 3.6 rectangular waveform 180 360 ta - i f(av) f ( av ) average forward current i (a) 0 0 20 40 60 80 100 120 140 maximum allowable temperature ta max ( c) 0.6 1.2 1.8 2.4 3.0 3.6 rectangular waveform 180 360 0.1 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 10 0.1 0.3 0.5 1 3 5 t =125 c 25 c j
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